AAC:
AAC is the abbreviation of for Advanced Audio Codec. This is an audio compression format developed by MPEG association belonging to second generation. This is considered as the successor of mp3 format.

ABL:
All bit line is abbreviated as ABL was introduced by SanDisk. This memory is faster than the conventional memory. A performance improvement of 100% is obtained when compared to conventional chips.

Access time:
Access time is the time taken by the device to access the memory card. The access time varies from device to device and one type of memory card to the other.

ATA 8 standard:
The ATA-8 standard is the chief in enabling the TRIM feature and is mainly designed for the purpose of Data Set Management command.

Bad block:
The memory storage is the collection of storage blocks. These defects in the storage blocks make the memory card unusable over the time and hence called as bad block.

Byte:
Byte is the storage unit which is the composition of 8 bits.

CPRM:
CPRM is the abbreviation of Content Protection for Recordable Media. This technology helps in giving the protection to the SD memory card. Protection such as authentication and certification are provided by this.

Channel:
Channel is the path through which the current flows in a MOSFET between n and p-type material.

Charge trap memory transistor:
This type of trapping memory transistor helps in storing the charged electrons in the floating gate.

Circuit:
The circuit is the electrical combination of components in order to perform a specific function.

CMOS:
CMOS is the acronym for Complementary Metal Oxide Semiconductor. This is actually a fabrication process which incorporates p and n channel MOS transistors in the same silicon substrate.

Data retention:
Data retention is the maximum time taken by the data written to be retrieved efficiently and reliably from the non volatile memory.

Die:
Die is the combination of several Integrated circuits which perform specific desired task. They are usually printed on the silicon wafer.

Dielectric:
A dielectric is actually an insulator which is used to describe non metals and describes their interaction with the electric, magnetic and electromagnetic fields.

Disturb error:
This is a major error in memory card reading and writing. This error reverses the value of bit during the reading and writing process.

EPROM:
EEPROM is the abbreviation for Erasable Programmable Read Only Memory. This is the previous version of non volatile memory.

Error Detection/Correction Code:
The error detection helps in rectifying the errors in the memory cards. The errors are rectified by reconstructing the original data by padding extra bits.

Etching:
Etching is a technique which is used to remove the top layers from the surface wafer during manufacturing. They layers of the semiconductor can also be protected by using a mask from etchant.

ExtremeFFS:
It is the Extreme Flash File System. This applies a novel approach for the flash management based on page based algorithm and fully non blocking architecture. This randomly increases the speed of SSD thus improving it efficiency and performance.

Flash Memory:
Memory cards are flash memory which allows the data to be written and rewritten but the data are never erased even when the power is shut off.

Floating gate:
They generally used to store power for longer periods of time even when there is no power supply for long time. They used to store charged electrons which makes it to hold the power.

Head:
Head is also called as Access arm. They are capable of reading and writing data from or to the platter surface of the hard drive.

Ingot:
This is a semiconductor material which is made of silicon. These are cut and polished to obtain wafers on which the memory devices are fabricated.

ISO 9293:
ISO 9293 is the format which is standardized by ISO (International Standards Organization). The memory cards such as of SD type complies this ISO 9293 standard for storing the data.

Logical Block Address:
The LBA is the abbreviation of Logical Block Address. This is an addressing schema that numbers the block in a linear fashion rather than numbering it in cylinder, head and sector numbers.

LDE:
LDE is the acronym of Long-term Data Endurance. This was proposed by SanDisk and it is simple metric proposed to determine the SSD endurance based on end user activity.

Mask:
Mask is a plate of glass or quartz which exposes or hides the wafer from the etching or fabrication process.

Mean time between failures:
It is abbreviated as MTBF. This is the average number of time till a failure has actually occurred.

MOSFET:
MOSFET is the acronym of Metal Oxide Semiconductor Field Effect Transistor. This is a device which works as an amplifier or switch. A MOSFET consists of n-type and p-type channels.

Moore’s Law:
This law helps in the miniaturization of the Integrated Circuits. This law states that the density of the transistors generally doubles every 2 years.

Silicon:
An important element in the periodic table which helps in the manufacturing of the semiconductors.

Tunnelling:
Tunnelling helps in the NAND flash reading and writing. In this phenomenon the electrons are made to flow between the insulating gaps of 2 semiconductors.

Transcend:
Transcend is a multinational company which is well known for its manufacture of flash memory. All the flash memory devices are given with a life time warranty and it is available at a very reasonable price.

Volatile Memory:
This is the type of memory in which all the data are lost when the device is powered off.